OHL, RUSSELL S.

Properties of Ionic Bombarded Silicon.

New York, American Telephone and Telegraph Company, 1952. 8vo. In the original printed blue wrappers. In "The Bell System Technical Journal", Volume XXXI, January, Number 1, 1952. Entire issue offered. Light miscolouring to spine. A fine fine and clean copy. Pp. 104-121. [Entire issue: 213pp.].

First printing of Ohl's paper. Tne of the first to use ion implantation in the fabrication of semiconductor devices was Russell S. Ohl in the present paper.

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